2SC5299
Features Of 2SC5299
NPN bipolar junction transistor
Designed for high-power RF amplifier applications in the VHF/UHF frequency range
High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency
Rated for a maximum collector-emitter voltage (VCEO) of 400V and a maximum collector current (IC) of 15A
High current gain with low input impedance, making it suitable for use in amplifier circuits
Fast switching speed and high-frequency response, with a typical cutoff frequency of 650MHz
TO-3P package
Suitable for use in high-power RF amplifier circuits in applications such as wireless communication, broadcasting, and radar systems, among others.
As one of electronic component suppliers, we can offer sorts of related products for sale, if you are interested, please contact us.
在线联系供应商
Other supplier products
 |
BU911 | Features Of BU911 NPN bipolar junction transistor High-power switching transistor, designed for use in industrial and automotive applications ... |
 |
Large Scale Integrated Circuit (LSI) | Large Scale Integrated Circuit (LSI) ZKHK's Large Scale Integrated Circuit(LSI) is a revolutionary new product that combines a wide range of funct... |
 |
Low Voltage MOS Transistor | Low Voltage MOS Transistor ZKHK's Low Voltage MOS Transistor is a reliable and highly efficient transistor designed to work in applications that r... |
 |
Bipolar Transistor | The ZKHK bipolar junction transistor as an amplifieris a great choice for a variety of applications. It is a three-terminal active component that c... |
 |
2SD1894 | Features Of 2SD1894 High power handling capability: The 2SD1894 is a power triode that can handle high power up to 120W, making it suitable for us... |
