2N3055
isc Silicon NPN Power Transistor 2N3055
DESCRIPTION
- Excellent Safe Operating Area
- DC Current Gain-hFE=20-70@IC = 4A
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
- Complement to Type MJ2955
APPLICATIONS
- Designed for general-purpose switching and amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-Base Voltage |
100 |
V |
|
VCER |
Collector-Emitter Voltage |
70 |
V |
|
VCEO |
Collector-Emitter Voltage |
60 |
V |
|
VEBO |
Emitter-Base Voltage |
7 |
V |
|
IC |
Collector Current-Continuous |
15 |
A |
|
IB |
Base Current |
7 |
A |
|
PC |
Collector Power Dissipation@TC=25℃ |
115 |
W |
|
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-65~+150 |
℃ |
THERMAL CHARACTERISTICS
|
SYMBOL |
PARAMETER |
MAX |
UNIT |
|
Rth j-c |
Thermal Resistance,Junction to Case |
℃/W |
iscSilicon NPN Power Transistors 2N3055
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
MAX |
UNIT |
|
VCEO(SUS) |
Collector-Emitter Sustaining Voltage |
IC=30mA ; IB=0 |
60 |
V |
|
|
VCER(SUS) |
Collector-Emitter Sustaining Voltage |
IC=1mA ; RBE=100Ω |
70 |
V |
|
|
VCE(sat)-1 |
Collector-Emitter Saturation Voltage |
IC= 4A; IB= 0.4A |
V |
||
|
VCE(sat)-2 |
Collector-Emitter Saturation Voltage |
IC= 10A; IB= 3.3A |
V |
||
|
VBE(on) |
Base-Emitter On Voltage |
IC= 4A ; VCE= 4V |
V |
||
|
ICEO |
Collector Cutoff Current |
VCE= 30V; IB=0 |
mA |
||
|
ICEX |
Collector Cutoff Current |
VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150℃ |
mA |
||
|
IEBO |
Emitter Cutoff Current |
VEB= 7.0V; IC=0 |
mA |
||
|
hFE-1 |
DC Current Gain |
IC= 4A ; VCE= 4V |
20 |
70 |
|
|
hFE-2 |
DC Current Gain |
IC= 10A ; VCE= 4V |
|||
|
Is/b |
Second Breakdown Collector Current with Base Forward Biased |
VCE= 40V,t= 1.0s,Nonrepetitive |
A |
||
|
fT |
Current Gain-Bandwidth Product |
IC= 0.5A ; VCE= 10V;f=1.0MHz |
MHz |
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