MJE13003A
isc Silicon NPN Power Transistor MJE13003A
DESCRIPTION
- Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
- Collector Saturation Voltage
: VCE(sat) = 1.0(Max) @ IC= 1.0A
APPLICATIONS
- Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators, inverters, DC-DC converter, Motor control,
Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCEV |
Collector-Emitter Voltage |
700 |
V |
|
VCEO |
Collector-Emitter Voltage |
400 |
V |
|
VEBO |
Emitter-Base Voltage |
9 |
V |
|
IC |
Collector Current-Continuous |
A |
|
|
IB |
Base Current |
A |
|
|
PC |
Collector Power Dissipation Ta=25℃ |
W |
|
|
Collector Power Dissipation TC=25℃ |
20 |
||
|
Ti |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature Range |
-55~150 |
℃ |
THERMAL CHARACTERISTICS
|
SYMBOL |
PARAMETER |
MAX |
UNIT |
|
Rth j-c |
Thermal Resistance,Junction to Case |
℃/W |
|
|
Rth j-a |
Thermal Resistance,Junction to Ambient |
89 |
℃/W |
isc Silicon NPN Power Transistor MJE13003A
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
MAX |
UNIT |
|
|
VCEO(SUS) |
Collector-Emitter Sustaining Voltage |
IC= 10mA; IB= 0 |
400 |
V |
||
|
VCE(sat) |
Collector-Emitter Saturation Voltage |
IC= 1 A ;IB= 0.25A |
V |
|||
|
VBE(sat) |
Base-Emitter Saturation Voltage |
IC= 1 A ;IB= 0.25A |
V |
|||
|
IEBO |
Emitter Cutoff Current |
VEB= 9V; IC= 0 |
1 |
mA |
||
|
ICEO |
Collector Cutoff Curren |
VCE= 400V; IB= 0 |
mA |
|||
|
ICBO |
Collector Cutoff Curren |
VCB= 700V; IE= 0 |
1 |
mA |
||
|
hFE-1 |
DC Current Gain |
IC= 0.5 A; VCE= 5V |
8 |
40 |
||
|
hFE-2 |
DC Current Gain |
IC= 1.5mA; VCE= 5V |
5 |
|||
|
fT |
Current-Gain—Bandwidth Product |
IC= 0.1 A; VCE= 10V; |
5 |
MHz |
在线联系供应商
Other supplier products
 |
ISC sillion power transsitor NPN BU508A | DESCRIPTION Pc: 60 W Ic: 7 A Vcbo: 400 V Vceo: 200 V hFE: 40-120 (1 A / 5 V) Package: TO-220 Remark: NPN APPLICATIONS Designed for use in Nebulizer. |
 |
ISC sillion power transsitor NPN BU508A | DESCRIPTION Pc: 100 W Ic: 15 A Vcbo: 450 V Vceo: 400 V hFE: 10- (1 A / 5 V) Package: TO-3 Remark: NPN APPLICATIONS Designed for use in Ultrasound. |
 |
ISC sillion power transsitor NPN BU508A | DESCRIPTION Pc: 20 W Ic: 1 A Vcbo: 230 V Vceo: 230 V hFE: 100-320 (0.1 A / 5 V) Package: TO-220F Remark: NPN APPLICATIONS Designed for use in powe... |
 |
ISC sillion power transsitor NPN BU508A | DESCRIPTION Pc: 50 W Ic: 7 A Vcbo: 200 V Vceo: 120 V hFE: 70-220 (3 A / 4 V) Package: TO-220 Remark: NPN APPLICATIONS Designed for use in Nebulize... |
 |
power transistors | ISC功率晶体管主要应用于音响、加湿器、雾化器、电源、汽车电子、开关、电视机、发电机、照明、点火器、机顶盒、点钞机、通信设备、报警器、仪器仪表、超声波设备、医疗设备、工业设备、船舶、军用、宽带放大器、变频器、打印机等。有2N、2SA、2SB、2SC、2SD、TIP、MJ、MJE、D、D44、D... |
Same products
 |
VB MOSFET FDD5614P package TO-252 instead FAIRCHILD SEMICONDUCTOR TRANSISTOR MOSFET P-CH 60V 15A DPAK | 卖方: ZK Electronic Technology Co., Limited | Part Number: FDD5614P Description: VB MOSFET FDD5614P package TO-252 instead FAIRCHILD SEMICON... |
 |
TRANSISTOR CJ BC817 260-600 PKG SOT-23 diode | 卖方: ZK Electronic Technology Co., Limited | Product Details Category: Diode PN: BC817 Brand: / Description: TRANSISTOR CJ BC817 260-600 ... |
 |
TRANSISTOR BCP69T1G ON PKG SOT-223 TRANS BIP PNP 20V 1A | 卖方: ZK Electronic Technology Co., Limited | Part Number: BCP69T1G Description: TRANSISTOR BCP69T1G ON PKG SOT-223 TRANS BIP PNP 20V 1A Vo... |
 |
SM6T39A IC TRANSIL 600W 39V UNIDIR SM LF ST MICROELECTRONICS | 卖方: ZK Electronic Technology Co., Limited | Part Number:SM6T39A Description: SM6T39A IC TRANSIL 600W 39V UNIDIR SM LF ST MICROELECTRONICS V... |
 |
Moset DMG2305UX TECH PUBLIC package SOT-23 | 卖方: ZK Electronic Technology Co., Limited | Part Number:DMG2305UX Description: Moset DMG2305UX TECH PUBLIC package SOT-23 Size: / Voltage:... |
