MJE13003A
isc Silicon NPN Power Transistor MJE13003A
DESCRIPTION
- Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.)
- Collector Saturation Voltage
: VCE(sat) = 1.0(Max) @ IC= 1.0A
APPLICATIONS
- Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for
115 and 220V switchmode applications such as switching
regulators, inverters, DC-DC converter, Motor control,
Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCEV |
Collector-Emitter Voltage |
700 |
V |
|
VCEO |
Collector-Emitter Voltage |
400 |
V |
|
VEBO |
Emitter-Base Voltage |
9 |
V |
|
IC |
Collector Current-Continuous |
A |
|
|
IB |
Base Current |
A |
|
|
PC |
Collector Power Dissipation Ta=25℃ |
W |
|
|
Collector Power Dissipation TC=25℃ |
20 |
||
|
Ti |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature Range |
-55~150 |
℃ |
THERMAL CHARACTERISTICS
|
SYMBOL |
PARAMETER |
MAX |
UNIT |
|
Rth j-c |
Thermal Resistance,Junction to Case |
℃/W |
|
|
Rth j-a |
Thermal Resistance,Junction to Ambient |
89 |
℃/W |
isc Silicon NPN Power Transistor MJE13003A
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
MAX |
UNIT |
|
|
VCEO(SUS) |
Collector-Emitter Sustaining Voltage |
IC= 10mA; IB= 0 |
400 |
V |
||
|
VCE(sat) |
Collector-Emitter Saturation Voltage |
IC= 1 A ;IB= 0.25A |
V |
|||
|
VBE(sat) |
Base-Emitter Saturation Voltage |
IC= 1 A ;IB= 0.25A |
V |
|||
|
IEBO |
Emitter Cutoff Current |
VEB= 9V; IC= 0 |
1 |
mA |
||
|
ICEO |
Collector Cutoff Curren |
VCE= 400V; IB= 0 |
mA |
|||
|
ICBO |
Collector Cutoff Curren |
VCB= 700V; IE= 0 |
1 |
mA |
||
|
hFE-1 |
DC Current Gain |
IC= 0.5 A; VCE= 5V |
8 |
40 |
||
|
hFE-2 |
DC Current Gain |
IC= 1.5mA; VCE= 5V |
5 |
|||
|
fT |
Current-Gain—Bandwidth Product |
IC= 0.1 A; VCE= 10V; |
5 |
MHz |
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