RF microwave high frequency low dielectric constant fused silica thin film circuit,Quartz glass thin film circuit，SiO2 thin film circuit
Substrate Type and Specifications
|
Substrate Material |
Purity |
A Surface Roughness |
B Surface Roughness |
Dielectric Constant |
Thermal Conductivity |
Dissipation Factor (Loss Tangent) |
|
% |
µ" |
µ" |
@1MHz |
W/mK |
@1MHz |
|
|
Asfired Alumina (Al2O3) |
3 |
3 |
||||
|
Polished Alumina (Al2O3) |
1 |
1 or 12 |
||||
|
Aluminum Nitride (AlN) |
98 |
3 |
3 |
170 |
||
|
Beryllium Oxide (BeO) |
3 |
10 |
270 |
|||
|
Sapphire (Crystalline) |
100 |
1 |
1 |
- |
||
|
Fused Silica (SiO2) |
100 |
1 |
1 |
- |
||
|
Ferrites and Garnets |
- |
16 |
16 |
- |
- |
|
|
Polished Titanates |
- |
3 |
3 |
36–180 |
- |
- |
WOCHENG commonly uses several
different materials for our thin film products, including alumina, beryllium oxide, aluminum nitride, fused silica quartz, titanates, ferrites and garnets. The materials are chosen for suitability for the application. Alumina is the most common substrate, but applications with high power dissipation tend to use BeO and AlN substrates for their thermal conductivity and high frequency applications would tend to use fused silica
quartz for its low dielectric constant.
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