Electronic grade sulfuric acid
|
Molecular formula |
Purity level |
||||
|
UP-SS |
UP-S |
UP |
EL |
||
|
H₂O₂ |
√ |
√ |
√ |
√ |
|
|
HCI |
√ |
||||
|
H2S04 |
√ |
√ |
√ |
||
|
Hn03 |
√ |
||||
|
HF |
√ |
||||
|
NH3,H20 |
√ |
||||
|
C2H402 |
√ |
||||
|
Na0H |
√ |
||||
|
K0H |
√ |
||||
|
Other high-purity reagents |
R&D and production according to customer requirements |
||||
Product standards
| Standard specification for ultraclean and high-purity electronic chemicals | |||
| EL level | UP level | UP-S level | UP-SS level |
| Processing Technology of Small and Medium Scale Integrated Circuits and Electronic Components | Manufacturing process of integrated circuit and TFT-LCD above 0.8 μ m | 0.2-0.8 micron IC processing technology | 0.18-0.09 micron line width integrated circuit processing technology |
| Control 1 micron particle size | Filter through 0.2 μ m aperture filter to control 0.5 μ m particles | Filtered by 0.05 μ m aperture filter to control 0.2 μ m particles | Filtered by 0.05 μ m aperture filter to control 0.2 μ m particles |
| Metal impurity content is less than 100ppb | Metal impurity content is less than 10ppb | Metal impurity content is less than 1 ppb | Impurity content of single metal ion ≤ 0.1ppb |
| Meet SEMI C1 C2 standard | Filling in 100 level purified environment, meeting SEMIC7 standard | Filling in 100 level purified environment, meeting SEMIC8 standard | Filling in 100 level purified environment, meeting SEMIGrade4 standard |
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