Ultra-High Vacuum Systems
Ultra-High Vacuum Systems
It supports Magnetron Sputtering for ITO Film and Seed Layer Based Process.
Working Principles
Ion Bombardment: Plasma ions accelerate toward a target, dislodging atoms by momentum transfer.
Magnetic Confinement: Magnetic fields trap electrons near the target, increasing plasma density and reducing ionization losses.
Reactive Sputtering: Introduction of reactive gases (e.g., O₂, N₂) allows for compound film deposition (oxides, nitrides).
Thermal Efficiency: The target remains relatively cool, which supports deposition of high-melting-point materials without excessive heating.
UHV Chamber & System Characteristics
The system supports multiple UHV sputtering chambers plus a load-lock chamber for efficient sample loading.
Base pressure can reach ≤ 3 E-9 Torr, enabling ultra-clean film growth.
Process temperature range spans from room temperature up to 900 °C, enabling thermal processing or elevated-temperature depositions.
Modular chamber architecture supports multi-layer structures, such as Nb/Al-AlOx/Nb, Al/AlOx/Al, or even α-Ta/TaOx/α-Ta junctions.
Wafer Transfer: Highly reliable and repeatable substrate transferring capability
Uniformity: Sheet Resistance Uniformity 1 Sigma NU%<±5% (4 inch wafer with 5 mm removal from the edge)
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