2SC3058
Features Of 2SC3058
NPN bipolar junction transistor
High power RF transistor, commonly used in RF power amplifier circuits for mobile s
High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency
Rated for a maximum collector-emitter voltage (VCEO) of 75V and a maximum collector current (IC) of 800mA
Low-level input impedance and high-current gain
Fast switching speed and high-frequency response
TO-220 package
Suitable for use in a wide range of RF power amplifier applications, such as mobile s, wireless communication devices, and other wireless applications.
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