2SC3058
Features Of 2SC3058
NPN bipolar junction transistor
High power RF transistor, commonly used in RF power amplifier circuits for mobile s
High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency
Rated for a maximum collector-emitter voltage (VCEO) of 75V and a maximum collector current (IC) of 800mA
Low-level input impedance and high-current gain
Fast switching speed and high-frequency response
TO-220 package
Suitable for use in a wide range of RF power amplifier applications, such as mobile s, wireless communication devices, and other wireless applications.
If you want to know more kinds of electronic component china, please visit our website.
Send product request
Other supplier products
 |
LQW18AN2N2D00D | LQW18AN2N2D00D Overview The SMD inductor LQW18AN2N2D00Dis a chip inductor that is designed to be used in a variety of electronic applications. ... |
 |
BYV28-200-TAP | Features Of BYV28200TAP Controlled avalanche characteristic Low forward voltage Ultra fast recovery time Glass passivated junction Her... |
 |
High Frequency Triode | The ZKHK high frequency transistoris a high-performance, high-frequency device designed for a wide range of applications. It features a low-noise d... |
 |
2SC5047 | Features Of 2SC5047 NPN bipolar junction transistor High-power RF transistor designed for use in RF power amplifier circuits High back press... |
 |
2SC5299 | Features Of 2SC5299 NPN bipolar junction transistor Designed for high-power RF amplifier applications in the VHF/UHF frequency range High ba... |
