2SC3058

• 

Features Of 2SC3058

NPN bipolar junction transistor

High power RF transistor, commonly used in RF power amplifier circuits for mobile s

High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency

Rated for a maximum collector-emitter voltage (VCEO) of 75V and a maximum collector current (IC) of 800mA

Low-level input impedance and high-current gain

Fast switching speed and high-frequency response

TO-220 package

Suitable for use in a wide range of RF power amplifier applications, such as mobile s, wireless communication devices, and other wireless applications.

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