BU911
isc Silicon NPN Power Transistor BU911
DESCRIPTION
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
APPLICATIONS
- Designed for application such as electronic ignition,
DC and AC motor controls,solenoid drivers.
Absolute maximum ratings (Ta=25℃)
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCES |
Collector-Emitter Voltage VBE= 0 |
450 |
V |
|
VCEO |
Collector-Emitter Voltage |
400 |
V |
|
VEBO |
Emitter-Base Voltage |
5 |
V |
|
IC |
Collector Current |
6 |
A |
|
ICM |
Collector Current-peak |
10 |
A |
|
IB |
Base Current |
1 |
A |
|
PC |
Collector Power Dissipation @TC=25℃ |
60 |
W |
|
Tj |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature Range |
-65~150 |
℃ |
THERMAL CHARACTERISTICS
|
SYMBOL |
PARAMETER |
MAX |
UNIT |
|
Rth j-c |
Thermal Resistance, Junction to Case |
℃/W |
isc Silicon NPN Power Transistor BU911
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
MAX |
UNIT |
|
|
VCEO(SUS)★ |
Collector-Emitter Sustaining Voltage |
IC= 50mA; IB= 0 |
400 |
V |
||
|
VCE(sat)-1★ |
Collector-Emitter Saturation Voltage |
IC= 2.5A; IB= 50mA |
V |
|||
|
V CE(sat)-2★ |
Collector-Emitter Saturation Voltage |
IC= 4A; IB= 200mA |
V |
|||
|
VBE(sat)-1★ |
Base-Emitter Saturation Voltage |
IC= 2.5A; IB= 50mA |
V |
|||
|
V BE(sat)-2★ |
Base-Emitter Saturation Voltage |
IC= 4A; IB= 200mA |
V |
|||
|
hFE |
DC Current Gain |
IC= 1A ; VCE= 2V |
500 |
2000 |
|
|
|
ICES |
Collector Cutoff Current |
VCE= 450V;VBE= 0 |
mA |
|||
|
ICEO |
Collector Cutoff Current |
VCE= 400V; IB= 0 |
mA |
|||
|
IEBO |
Emitter Cutoff Current |
VEB= 5V; IC= 0 |
mA |
|||
|
VECF★ |
C-E Diode Forward Voltage |
IF= 4A |
V |
★Pulse:pulse duration=300us,duty cycle=1.5%
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