2SC5200
INCHANGE Semiconductor iscProduct Specification
isc Silicon NPN Power Transistor 2SC5200
DESCRIPTION
- High Current Capability
- High Power Dissipation
- High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 230V(Min)
- Complement to Type 2SA1943
APPLICATIONS
- Power amplifier applications
- Recommend for 100W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-Base Voltage |
230 |
V |
|
VCEO |
Collector-Emitter Voltage |
230 |
V |
|
VEBO |
Emitter-Base Voltage |
5 |
V |
|
IC |
Collector Current-Continuous |
15 |
A |
|
IB |
Base Current-Continuous |
A |
|
|
PC |
Collector Power Dissipation @ TC=25℃ |
150 |
W |
|
TJ |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature Range |
-55~150 |
℃ |
INCHANGE Semiconductor iscProduct Specification
isc Silicon NPN Power Transistor 2SC5200
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
MAX |
UNIT |
|
|
V(BR)CEO |
Collector-Emitter Breakdown Voltage |
IC= 50mA ; IB= 0 |
230 |
V |
||
|
VCE(sat) |
Collector-Emitter Saturation Voltage |
IC= 8.0A; IB= 0.8A |
V |
|||
|
VBE(on) |
Base-Emitter On Voltage |
IC= 7A ; VCE= 5V |
V |
|||
|
ICBO |
Collector Cutoff Current |
VCB= 230V ; IE= 0 |
5 |
μA |
||
|
IEBO |
Emitter Cutoff Current |
VEB= 5V; IC= 0 |
5 |
μA |
||
|
hFE-1 |
DC Current Gain |
IC= 1A ; VCE= 5V |
55 |
160 |
||
|
hFE-2 |
DC Current Gain |
IC= 7A ; VCE= 5V |
35 |
|||
|
COB |
Output Capacitance |
IE=0 ; VCB= 10V;f= 1.0MHz |
200 |
pF |
||
|
fT |
Current-Gain—Bandwidth Product |
IC=1A ; VCE= 5V |
30 |
MHz |
u hFE-1 Classifications
|
R |
O |
|
55-110 |
80-160 |
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