R-PLANE (1-102) SAPPHIRE WAFERS
R-PLANE (1-102) SAPPHIRE WAFERS
R plane sapphire wafers are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications. R plane is the non-polar plane of sapphire. So the different positions of R-plane in custom sapphire optics devices, the mechanical, thermal, electrical and optical properties of sapphire devices will vary greatly, which will also affect the subsequent processing performance, processing efficiency and processing yield of sapphire devices.
In order to make the crystal structure of sapphire ingot and subsequent sapphire products consistent, the more common method is to process an A-direction surface on the sapphire ingot as the flat orientation of the polished sapphire wafer (subsequent sapphire products), so that the R-direction position of sapphire ingot and the wafer is consistent.
Specifications of R-Plane (1-102) Sapphire Wafers
Item 2 -inch R-plane(1-102) 430μm Sapphire Wafers
Crystal Materials 99,999%, High Purity, Monocrystalline Al2O3
Grade Prime, Epi-Ready
Surface Orientation R-plane(1-102)
Diameter 50.8 mm +/- 0.1 mm
Thickness 430 μm +/- 25 μm
Primary Flat Orientation 45 +/- 1deg. counter-clockwise from C-axis projection on R-plane
Primary Flat Length 16.0 mm +/- 1.0 mm
Single Side Polished Front Surface Epi-polished, Ra < 0.5 nm (by AFM)
(SSP) Back Surface Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished Front Surface Epi-polished, Ra < 0.5 nm (by AFM)
(DSP) Back Surface Epi-polished, Ra < 0.5 nm (by AFM)
TTV < 10 μm
BOW < 10 μm
WARP < 10 μm
Cleaning / Packaging Class 100 cleanroom cleaning and vacuum packaging,
25 pieces in one cassette packaging or single piece packaging.
Note: Custom sapphire wafers with any orientation and any thickness can be provided.
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