2SC6104
Features Of 2SC6104
NPN bipolar junction transistor
High-power RF transistor designed for use in RF and microwave power amplifier circuits
High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency
Rated for a maximum collector-emitter voltage (VCEO) of 65V and a maximum collector current (IC) of 12A
Designed for use at high frequencies with a typical cutoff frequency of 3GHz
High current gain with low input impedance, making it suitable for use in amplifier circuits
TO-220 package
Suitable for use in high-power RF and microwave amplifier circuits in applications such as wireless communication, radar systems, and electronic warfare, among others.
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