BYG20G
Features Of BYG20G
Glass passivated junction chip
Ideal for automated placement
Fast switching for high efficiency
High surge current capability
Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
As a reliable electronic parts company, we will do our best to meet all the needs of customers.
Send product request
Other supplier products
2SC5047 | Features Of 2SC5047 NPN bipolar junction transistor High-power RF transistor designed for use in RF power amplifier circuits High back press... | |
2SC3058 | Features Of 2SC3058 NPN bipolar junction transistor High power RF transistor, commonly used in RF power amplifier circuits for mobile s High... | |
2SC6104 | Features Of 2SC6104 NPN bipolar junction transistor High-power RF transistor designed for use in RF and microwave power amplifier circuits H... | |
2SC3550 | Features Of 2SC3550 NPN bipolar junction transistor High-power RF transistor designed for use in RF power amplifier circuits High back press... | |
High Frequency Triode | The ZKHK high frequency transistoris a high-performance, high-frequency device designed for a wide range of applications. It features a low-noise d... |