ISC sillion power transsitor PNP 2SB817
DESCRIPTION
Pc: 100 W
Ic: -12 A
Vcbo: -160 V
Vceo: -140 V
hFE: 60-200 (-1 A / -5 V)
Package: TO-3PN
Remark: PNP
APPLICATIONS
Designed for use in power amplifier.
Other supplier products
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ISC sillion power transsitor PNP 2SB817 |
DESCRIPTION Pc: 100 W Ic: -12 A Vcbo: -160 V Vceo: -140 V hFE: 60-200 (-1 A / -5 V) Package: TO-3PN Remark: PNP APPLICATIONS Designed for use in p... |
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TIP41 |
isc Silicon NPN Power Transistors TIP41/41A/41B/41C
DESCRIPTION
DC Current Gain -hFE = 30(Min)@IC= -0.3A
Collector-Emitter Sustaining Voltage-
... |
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2N3055 |
isc Silicon NPN Power Transistor 2N3055
DESCRIPTION
Excellent Safe Operating Area
DC Current Gain-hFE=20-70@IC = 4A
Collector-Emitter ... |
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BU911 |
isc Silicon NPN Power Transistor BU911
DESCRIPTION
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)
APPLICATIONS
Designed fo... |
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2N3773 |
iscSilicon NPN Power Transistor 2N3773
DESCRIPTION
Excellent Safe Operating Area
High DC Current Gain-hFE=15(Min)@IC = 8A
Low Saturation Voltage... |
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