2SC5299
Features Of 2SC5299
NPN bipolar junction transistor
Designed for high-power RF amplifier applications in the VHF/UHF frequency range
High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency
Rated for a maximum collector-emitter voltage (VCEO) of 400V and a maximum collector current (IC) of 15A
High current gain with low input impedance, making it suitable for use in amplifier circuits
Fast switching speed and high-frequency response, with a typical cutoff frequency of 650MHz
TO-3P package
Suitable for use in high-power RF amplifier circuits in applications such as wireless communication, broadcasting, and radar systems, among others.
As one of electronic component suppliers, we can offer sorts of related products for sale, if you are interested, please contact us.
Отправить запрос, связаться с поставщиком
Другие товары поставщика
 |
2SC3058 | Features Of 2SC3058 NPN bipolar junction transistor High power RF transistor, commonly used in RF power amplifier circuits for mobile s High... |
 |
DA3X101F0L | Features Of DA3X101F0L Small reverse current IR Short reverse recovery time trr Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Leve... |
 |
General Purpose Diode | A diode generalis a type of electronic component that can conduct electrical current in one direction while blocking the flow in the opposite direc... |
 |
Insulated Gate Bipolar Transistors (IGBT) | ZKHK IGBT Transistors are designed to provide robust, reliable, and efficient performance in a wide range of applications. These transistors featur... |
 |
Darlington Transistor | The ZKHK darlington power transistoris designed for a wide range of applications, ranging from low-power switching to high-power amplifier circuits... |
