2SC5299
Features Of 2SC5299
NPN bipolar junction transistor
Designed for high-power RF amplifier applications in the VHF/UHF frequency range
High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency
Rated for a maximum collector-emitter voltage (VCEO) of 400V and a maximum collector current (IC) of 15A
High current gain with low input impedance, making it suitable for use in amplifier circuits
Fast switching speed and high-frequency response, with a typical cutoff frequency of 650MHz
TO-3P package
Suitable for use in high-power RF amplifier circuits in applications such as wireless communication, broadcasting, and radar systems, among others.
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