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R-PLANE (1-102) SAPPHIRE WAFERS

R plane(1-102) sapphire wafers are preferred for the hetero-epitaxial deposition of silicon used in microelectronic IC applications. R plane is the non-polar plane of sapphire. So the different positions of R-plane in sapphire devices, the mechanical, thermal, electrical and optical properties of sapphire devices will vary greatly, which will also affect the subsequent processing performance, processing efficiency and processing yield of sapphire devices.

In order to make the crystal structure of sapphire ingot and subsequent sapphire products consistent, the more common method is to process an A-direction surface on the sapphire ingot as the flat orientation of sapphire wafer (subsequent sapphire products), so that the R-direction position of sapphire ingot and the wafer is consistent.

Specifications of R Plane SapphireWafers

Item

2 -inch R-plane(1-102) 430μm Sapphire Wafers

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Grade

Prime, Epi-Ready

Surface Orientation

R-plane(1-102)

Diameter

Thickness

430 μm +/- 25 μm

Primary Flat Orientation

45 +/- 1deg. counter-clockwise from C-axis projection on R-plane

Primary Flat Length

Single Side Polished

Front Surface

Epi-polished, Ra < 0.5 nm (by AFM)

(SSP)

Back Surface

Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished

Front Surface

Epi-polished, Ra < 0.5 nm (by AFM)

(DSP)

Back Surface

Epi-polished, Ra < 0.5 nm (by AFM)

TTV

< 10 μm

BOW

< 10 μm

WARP

< 10 μm

Cleaning / Packaging

Class 100 cleanroom cleaning and vacuum packaging,

25 pieces in one cassette packaging or single piece packaging.

Note: Custom sapphire wafers with any orientation and any thickness can be provided.

CRYSCORE can provide standard or custom sapphire waferswith any orientation applied to epitaxy, as well as sapphire windowswith any specifications applied to optics. Patterned sapphire substratesand sapphire ingots also can be provided. Expert in sapphire optics manufacturing.



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