ISC sillion power transsitor NPN BU508A
DESCRIPTION
Pc: 20 W
Ic: 1 A
Vcbo: 230 V
Vceo: 230 V
hFE: 100-320 (0.1 A / 5 V)
Package: TO-220F
Remark: NPN
APPLICATIONS
Designed for use in power amplifier.
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DESCRIPTION Pc: 40 W Ic: 3 A Vcbo: 900 V Vceo: 800 V hFE: 10- (1 A / 5 V) Package: TO-220Fa Remark: NPN APPLICATIONS Designed for use in Ultrasound. |
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BU911 |
isc Silicon NPN Power Transistor BU911
DESCRIPTION
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: VCEO(SUS) = 400V(Min)
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ISC sillion power transsitor NPN BU508A |
DESCRIPTION Pc: 30 W Ic: 15 A Vcbo: 100 V Vceo: 60 V hFE: 100-400 (3 A / 2 V) Package: TO-220F Remark: NPN APPLICATIONS Designed for use in Freque... |
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2SC5200 |
INCHANGE Semiconductor iscProduct Specification
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DESCRIPTION
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DESCRIPTION
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集成电路 |
卖方: 中科国芯 |
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O-252 TO-251 Low Forward Voltage Drop Super Fast Rectifiers Diode 3A 600V Replace TO-220/R-6/DO-201AD |
卖方: MICRODIODE ELECTRONICS (SHENZHEN)CO., LTD |
Place of Origin:Jiangsu, China (Mainland)
Brand Name:MDD
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1.7V
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Schottky Barrier Rectifier Diode 1A 40V DSK14 SB10100L MBR10100CT SR5100 |
卖方: MICRODIODE ELECTRONICS (SHENZHEN)CO., LTD |
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0.55V
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