640 SWIR InGaAs High Cost-Performance Camera GigE
GHOPTO SWIR imaginggigabit camerais based on an in-house developed InGaAs detector with multiple resolutions. The compact GH-SW640-GigE meets requirements of high sensitivity in the SWIR range from 900nm to1700nm and with accompanied by extended wavelength from 400nm to 1700nm options. The short wave infrared cameracomes with PAL output and GigE vision interface, supporting 14-bit data transfer and adjustable exposure time. The SWIR Short Wave InfraredGigE/GIG-E vision 2.0camera offers unique capabilities for various applications in Industrial inspections as nondestructive test, Si wafer inspection, semiconductor circuit detection, laser beam profiling and process monitoring. We also offer 10 GIG-E visioncamera as well as USB infrared camera.
PERFORMANCE ADVANTAGES OF GH-SW640-GIGE
TECHNICAL INFORMATION OF GH-SW640-GIGE
|
Type |
GH-SW640-GigE |
|
Array Type |
InGaAs |
|
FPA Format |
640 x 512 |
|
Spectral Response |
|
|
Pixel Pitch |
15μm |
|
Active Area |
|
|
Quantum Efficiency |
＞70%（1.0 ~ 1.6μm） |
|
Frame Rate |
100 Hz |
|
Integration Type |
snapshot |
|
Integration Time Range |
50 μs ~ 20 ms /100Hz maximum integral:9ms |
|
On-board Image Processing |
One/two-point correction、bad pixel replacement、image denoising 、image smoothing, controllable shutter compensation |
|
Operability |
＞99.5% |
|
Dynamic Range |
76 dB( linear mode ) |
|
Charge handing capacity |
|
|
ADC |
14bit |
|
Analog Output |
PAL、SMA |
|
Digital Output |
GigE |
|
Image Acquisition |
GUI / SDK |
|
Trigger |
Trigger RS485（optional） |
|
Power Input |
DC 12V |
|
Power Consumption |
＜4W（noTEC） |
|
Lens Mount |
C-Mount |
|
Operating Temperature |
-20 ℃ ~ +50 ℃ / -40 ℃ ~ +60 ℃（optional） |
|
Storage Temperature |
-40 ℃ ~ +80 ℃ |
DRAWING OF GH-SW640-GIGE
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