2SC3058
Features Of 2SC3058
NPN bipolar junction transistor
High power RF transistor, commonly used in RF power amplifier circuits for mobile s
High back pressure triode designed to operate with high levels of back pressure, resulting in higher power output and efficiency
Rated for a maximum collector-emitter voltage (VCEO) of 75V and a maximum collector current (IC) of 800mA
Low-level input impedance and high-current gain
Fast switching speed and high-frequency response
TO-220 package
Suitable for use in a wide range of RF power amplifier applications, such as mobile s, wireless communication devices, and other wireless applications.
If you want to know more kinds of electronic component china, please visit our website.
Send product request
Other supplier products
 |
Bipolar Transistor | The ZKHK bipolar junction transistor as an amplifieris a great choice for a variety of applications. It is a three-terminal active component that c... |
 |
LQW18AN18NG00D | LQW18AN18NG00D Overview The SMD inductor LQW18AN18NG00Dis a surface mount device (SMD) chip inductor that is designed to be used in a variety of e... |
 |
KIA7805A | Features Of KIA7805A Internal Thermal Overload Protection. Internal Short Circuit Current Limiting. Output Current in Excess of 1A. Satis... |
 |
2SC6104 | Features Of 2SC6104 NPN bipolar junction transistor High-power RF transistor designed for use in RF and microwave power amplifier circuits H... |
 |
2SD1590 | Features Of 2SD1590 High power handling capability: The 2SD1590 is a power triode that can handle high power up to 150W, making it suitable for us... |
