.

2SC5200

INCHANGE Semiconductor iscProduct Specification

isc Silicon NPN Power Transistor 2SC5200

DESCRIPTION
  • High Current Capability
  • High Power Dissipation
  • High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 230V(Min)

  • Complement to Type 2SA1943

APPLICATIONS

  • Power amplifier applications
  • Recommend for 100W high fidelity audio frequency amplifier

output stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

230

V

VCEO

Collector-Emitter Voltage

230

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

IB

Base Current-Continuous

A

PC

Collector Power Dissipation

@ TC=25℃

150

W

TJ

Junction Temperature

150

Tstg

Storage Temperature Range

-55~150

INCHANGE Semiconductor iscProduct Specification

isc Silicon NPN Power Transistor 2SC5200

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 50mA ; IB= 0

230

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 8.0A; IB= 0.8A

V

VBE(on)

Base-Emitter On Voltage

IC= 7A ; VCE= 5V

V

ICBO

Collector Cutoff Current

VCB= 230V ; IE= 0

5

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

5

μA

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

55

160

hFE-2

DC Current Gain

IC= 7A ; VCE= 5V

35

COB

Output Capacitance

IE=0 ; VCB= 10V;f= 1.0MHz

200

pF

fT

Current-Gain—Bandwidth Product

IC=1A ; VCE= 5V

30

MHz

u hFE-1 Classifications

R

O

55-110

80-160



Send product request

To: Inchange Semiconductor Company
Your E-mail:
Message text:


Send to other suppliers

Other supplier products

MJE13003A
MJE13003A isc Silicon NPN Power Transistor MJE13003A DESCRIPTION Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) Collector Saturation...
ISC sillion power transsitor NPN 2SC3998
ISC sillion power transsitor NPN 2SC3998 DESCRIPTION Pc: 250 W Ic: 25 A Vcbo: 1500 V Vceo: 800 V hFE: 6-30(1 A / 5 V) Package: TO-3PL Remark: NPN APPLICATIONS Designed for use in Ultrasound.
ISC sillion power transsitor NPN 2SC3834
ISC sillion power transsitor NPN 2SC3834 DESCRIPTION Pc: 50 W Ic: 7 A Vcbo: 200 V Vceo: 120 V hFE: 70-220 (3 A / 4 V) Package: TO-220 Remark: NPN APPLICATIONS Designed for use in Nebulize...
ISC sillion power transsitor NPN BU406
ISC sillion power transsitor NPN BU406 DESCRIPTION Pc: 60 W Ic: 7 A Vcbo: 400 V Vceo: 200 V hFE: 40-120 (1 A / 5 V) Package: TO-220 Remark: NPN APPLICATIONS Designed for use in Nebulizer.
ISC sillion power transsitor NPN 2SC3835
ISC sillion power transsitor NPN 2SC3835 DESCRIPTION Pc: 70 W Ic: 7 A Vcbo: 200 V Vceo: 120 V hFE: 70-220 (3 A / 4 V) Package: TO-3PN Remark: NPN APPLICATIONS Designed for use in Nebulizer.
All supplier products

Same products

SMD transistor
SMD transistor Seller: PAGOODA TECHNOLOGY CO SMD transistorPingshang Technology SMD transistor introduction:Type: NPN, PNPSeries: MMBT3904, MM...
SMD triode
SMD triode Seller: 780520 SMD triode conventional specifications include:Package: SOT-23model:S9012, S9013, S9014, S9015, S...
SMD triode
SMD triode Seller: PAGOODA TECHNOLOGY CO SMD triode conventional specifications include:Package: SOT-23model:S9012, S9013, S9014, S9015, S...
SMD triode
SMD triode Seller: PAGOODA TECHNOLOGY CO SMD triode conventional specifications include:Package: SOT-23model:S9012, S9013, S9014, S9015, S...
SMD triode
SMD triode Seller: 780520 SMD triode conventional specifications include:Package: SOT-23model:S9012, S9013, S9014, S9015, S...