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Ultra-High Vacuum Systems

Ultra-High Vacuum Systems

It supports Magnetron Sputtering for ITO Film and Seed Layer Based Process.

Working Principles

Ion Bombardment: Plasma ions accelerate toward a target, dislodging atoms by momentum transfer.

Magnetic Confinement: Magnetic fields trap electrons near the target, increasing plasma density and reducing ionization losses.

Reactive Sputtering: Introduction of reactive gases (e.g., O₂, N₂) allows for compound film deposition (oxides, nitrides).

Thermal Efficiency: The target remains relatively cool, which supports deposition of high-melting-point materials without excessive heating.

UHV Chamber & System Characteristics

The system supports multiple UHV sputtering chambers plus a load-lock chamber for efficient sample loading.

Base pressure can reach ≤ 3 E-9 Torr, enabling ultra-clean film growth.

Process temperature range spans from room temperature up to 900 °C, enabling thermal processing or elevated-temperature depositions.

Modular chamber architecture supports multi-layer structures, such as Nb/Al-AlOx/Nb, Al/AlOx/Al, or even α-Ta/TaOx/α-Ta junctions.

Wafer Transfer: Highly reliable and repeatable substrate transferring capability

Uniformity: Sheet Resistance Uniformity 1 Sigma NU%<±5% (4 inch wafer with 5 mm removal from the edge)


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