2N3773

isc Silicon NPN Power Transistor                  2N3773
   
DESCRIPTION                                               
  • Excellent Safe Operating Area
  • High DC Current Gain-hFE=15(Min)@IC = 8A
  • Low Saturation Voltage-

: VCE(sat)= 1.4V(Max)@ IC = 8A

  • Complement to Type 2N6609

 

APPLICATIONS

  • Designed for high power audio ,disk head positioners and

  other linear applications, which can also be used in power

  switching circuits such as relay or solenoid drivers, DC-DC

  converters or inverters.  

  

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEX

Collector-Emitter Voltage

160

V

VCEO

Collector-Emitter Voltage

140

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

16

A

ICP

Collector Current-Peak

30

A

IB

Base Current-Continuous 

4

A

IBP

Base Current-Peak

15

A

PC

Collector Power Dissipation @TC=25℃

150

W

TJ

Junction Temperature

150

Tstg

Storage Temperature

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

 

℃/W

 

                                              

isc Silicon NPN Power Transistor                  2N3773

 

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=50mA ; IB=0

140

 

V

VCEX(SUS)

Collector-Emitter Sustaining Voltage

IC=100mA ; VBE(off)= 1.5V; RBE=100Ω

160

 

V

VCER(SUS)

Collector-Emitter Sustaining Voltage

IC=200mA ; RBE=100Ω

150

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 8A; IB= 0.8A

 

 

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 16A; IB= 3.2A

 

 

V

VBE(on)

Base-Emitter On Voltage

IC= 8A ; VCE= 4V

 

 

V

ICEO

Collector Cutoff Current

VCE= 120V; IB=0

 

10

mA

IEBO

Emitter Cutoff Current

VEB= 7.0V; IC=0

 

5

mA

hFE-1

DC Current Gain

IC= 8A ; VCE= 4V

15

60

 

hFE-3

DC Current Gain

IC= 16A ; VCE= 4V

5

 

 

Is/b

Second Breakdown Collector

Current with Base Forward Biased

VCE= 100V,t= 1.0s,Nonrepetitive

 

 

A

 



在线询价

至: Inchange Semiconductor Company
Your E-mail:
消息正文:


Send to other suppliers

Other supplier products

ISC sillion power transsitor NPN BU508A
ISC sillion power transsitor NPN BU508A DESCRIPTION Pc: 100 W Ic: -12 A Vcbo: -160 V Vceo: -140 V hFE: 60-200 (-1 A / -5 V) Package: TO-3PN Remark: PNP APPLICATIONS Designed for use in p...
ISC sillion power transsitor NPN BU508A
ISC sillion power transsitor NPN BU508A DESCRIPTION Pc: 40 W Ic: 7 A Vcbo: 450 V Vceo: 400 V hFE: 10- (4 A / 5 V) Package: TO-220 Remark: NPN APPLICATIONS Designed for use in power suppl...
2N3055
2N3055 isc Silicon NPN Power Transistor                  2N3055 &nbs...
ISC sillion power transsitor NPN BU508A
ISC sillion power transsitor NPN BU508A DESCRIPTION Pc: 20 W Ic: 1 A Vcbo: 230 V Vceo: 230 V hFE: 100-320 (0.1 A / 5 V) Package: TO-220F Remark: NPN APPLICATIONS Designed for use in powe...
2N3773
2N3773 isc Silicon NPN Power Transistor                  2N3773 ...
供应产品

Same products

NPN Silicon Epitaxial Planar Transistors MMBTSC945
NPN Silicon Epitaxial Planar Transistors MMBTSC945 卖方: Kingtronics International Company NPN Silicon Epitaxial Planar Transistors MMBTSC945 Collector base voltage: 60V Collector emitter ...
NPN Silicon Epitaxial Planar Transistors MMBT9018
NPN Silicon Epitaxial Planar Transistors MMBT9018 卖方: Kingtronics International Company NPN Silicon Epitaxial Planar Transistors MMBT9018 Collector base voltage: 50V Collector emitter v...
NPN Silicon Epitaxial Planar Transistors MMBT9014 Collector base voltage: 30V Collector emitter voltage: 15V Emitter base voltage: 5V Collector current: 50mA Power dissipation: 200mW Junction temperat
NPN Silicon Epitaxial Planar Transistors MMBT9014 Collector base voltage: 30V Collector emitter voltage: 15V Emitter base voltage: 5V Collector current: 50mA Power dissipation: 200mW Junction temperat 卖方: Kingtronics International Company NPN Silicon Epitaxial Planar Transistors MMBT9014 Collector base voltage: 30V Collector emitter v...
NPN Silicon Epitaxial Planar Transistors MMBT9013 Collector base voltage: 40V Collector emitter voltage: 30V Emitter base voltage: 5V Collector current: 500mA Power dissipation: 200mW Junction tempera
NPN Silicon Epitaxial Planar Transistors MMBT9013 Collector base voltage: 40V Collector emitter voltage: 30V Emitter base voltage: 5V Collector current: 500mA Power dissipation: 200mW Junction tempera 卖方: Kingtronics International Company NPN Silicon Epitaxial Planar Transistors MMBT9013 Collector base voltage: 40V Collector emitter v...
PNP SiliconPNP Silicon Epitaxial Planar Transistors MMBT9012 Epitaxial Planar Transistors MMBT9012
PNP SiliconPNP Silicon Epitaxial Planar Transistors MMBT9012 Epitaxial Planar Transistors MMBT9012 卖方: Kingtronics International Company PNP Silicon Epitaxial Planar Transistors MMBT9012 Collector base voltage: 40V Collector emitter v...