2N3773

isc Silicon NPN Power Transistor                  2N3773
   
DESCRIPTION                                               
  • Excellent Safe Operating Area
  • High DC Current Gain-hFE=15(Min)@IC = 8A
  • Low Saturation Voltage-

: VCE(sat)= 1.4V(Max)@ IC = 8A

  • Complement to Type 2N6609

 

APPLICATIONS

  • Designed for high power audio ,disk head positioners and

  other linear applications, which can also be used in power

  switching circuits such as relay or solenoid drivers, DC-DC

  converters or inverters.  

  

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEX

Collector-Emitter Voltage

160

V

VCEO

Collector-Emitter Voltage

140

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

16

A

ICP

Collector Current-Peak

30

A

IB

Base Current-Continuous 

4

A

IBP

Base Current-Peak

15

A

PC

Collector Power Dissipation @TC=25℃

150

W

TJ

Junction Temperature

150

Tstg

Storage Temperature

-65~150

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

 

℃/W

 

                                              

isc Silicon NPN Power Transistor                  2N3773

 

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=50mA ; IB=0

140

 

V

VCEX(SUS)

Collector-Emitter Sustaining Voltage

IC=100mA ; VBE(off)= 1.5V; RBE=100Ω

160

 

V

VCER(SUS)

Collector-Emitter Sustaining Voltage

IC=200mA ; RBE=100Ω

150

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 8A; IB= 0.8A

 

 

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 16A; IB= 3.2A

 

 

V

VBE(on)

Base-Emitter On Voltage

IC= 8A ; VCE= 4V

 

 

V

ICEO

Collector Cutoff Current

VCE= 120V; IB=0

 

10

mA

IEBO

Emitter Cutoff Current

VEB= 7.0V; IC=0

 

5

mA

hFE-1

DC Current Gain

IC= 8A ; VCE= 4V

15

60

 

hFE-3

DC Current Gain

IC= 16A ; VCE= 4V

5

 

 

Is/b

Second Breakdown Collector

Current with Base Forward Biased

VCE= 100V,t= 1.0s,Nonrepetitive

 

 

A

 



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