2N3773
iscSilicon NPN Power Transistor 2N3773
DESCRIPTION
- Excellent Safe Operating Area
- High DC Current Gain-hFE=15(Min)@IC = 8A
- Low Saturation Voltage-
: VCE(sat)= 1.4V(Max)@ IC = 8A
- Complement to Type 2N6609
APPLICATIONS
- Designed for high power audio ,disk head positioners and
other linear applications, which can also be used in power
switching circuits such as relay or solenoid drivers, DC-DC
converters or inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-Base Voltage |
160 |
V |
|
VCEX |
Collector-Emitter Voltage |
160 |
V |
|
VCEO |
Collector-Emitter Voltage |
140 |
V |
|
VEBO |
Emitter-Base Voltage |
7 |
V |
|
IC |
Collector Current-Continuous |
16 |
A |
|
ICP |
Collector Current-Peak |
30 |
A |
|
IB |
Base Current-Continuous |
4 |
A |
|
IBP |
Base Current-Peak |
15 |
A |
|
PC |
Collector Power Dissipation @TC=25℃ |
150 |
W |
|
TJ |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature |
-65~150 |
℃ |
THERMAL CHARACTERISTICS
|
SYMBOL |
PARAMETER |
MAX |
UNIT |
|
Rth j-c |
Thermal Resistance,Junction to Case |
℃/W |
isc Silicon NPN Power Transistor 2N3773
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
MAX |
UNIT |
|
VCEO(SUS) |
Collector-Emitter Sustaining Voltage |
IC=50mA ; IB=0 |
140 |
V |
|
|
VCEX(SUS) |
Collector-Emitter Sustaining Voltage |
IC=100mA ; VBE(off)= 1.5V; RBE=100Ω |
160 |
V |
|
|
VCER(SUS) |
Collector-Emitter Sustaining Voltage |
IC=200mA ; RBE=100Ω |
150 |
V |
|
|
VCE(sat)-1 |
Collector-Emitter Saturation Voltage |
IC= 8A; IB= 0.8A |
V |
||
|
VCE(sat)-2 |
Collector-Emitter Saturation Voltage |
IC= 16A; IB= 3.2A |
V |
||
|
VBE(on) |
Base-Emitter On Voltage |
IC= 8A ; VCE= 4V |
V |
||
|
ICEO |
Collector Cutoff Current |
VCE= 120V; IB=0 |
10 |
mA |
|
|
IEBO |
Emitter Cutoff Current |
VEB= 7.0V; IC=0 |
5 |
mA |
|
|
hFE-1 |
DC Current Gain |
IC= 8A ; VCE= 4V |
15 |
60 |
|
|
hFE-3 |
DC Current Gain |
IC= 16A ; VCE= 4V |
5 |
||
|
Is/b |
Second Breakdown Collector Current with Base Forward Biased |
VCE= 100V,t= 1.0s,Nonrepetitive |
A |
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