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M-PLANE (10-10) SAPPHIRE WAFERS

Due to its application prospects in solar-blind ultraviolet detection, MgZnO alloy semiconductor films with suitable band gaps have attracted more and more attention. A series of MgxZn1-xO thin films with different compositions were prepared on M plane sapphire wafers by using low-pressure metalorganic chemical vapor deposition (LP-MOCVD).

CRYSCORE provides sapphireM plane(10-10) with excellent surface quality. The roughness on the epi-polished side is lower than 0.5 nm.

Specifications of M-Plane (10-10) Sapphire Wafers

Item

2-inch M-plane(10-10) 430μm Sapphire Wafers

Crystal Materials

99,999%, High Purity, Monocrystalline Al2O3

Grade

Prime, Epi-Ready

Surface Orientation

M-plane(11-10)

Diameter

Thickness

430 μm +/- 25 μm

Primary Flat Orientation

C-plane(0001) +/- 0.2°

Primary Flat Length

Single Side Polished

(SSP)

Front Surface

Epi-polished, Ra < 0.5 nm (by AFM)

Back Surface

Fine ground, Ra = 0.8 μm to 1.2 μm

Double Side Polished

(DSP)

Front Surface

Epi-polished, Ra < 0.5 nm (by AFM)

Back Surface

Epi-polished, Ra < 0.5 nm (by AFM)

TTV

< 10 μm

BOW

< 10 μm

WARP

< 10 μm

Cleaning / Packaging

Class 100 cleanroom cleaning and vacuum packaging,

25 pieces in one cassette packaging or single piece packaging.

Note: Custom sapphire wafers with any orientation and any thickness can be provided.

CRYSCORE can provide standard or custom sapphire waferswith any orientation applied to epitaxy, as well as sapphire windowswith any specifications applied to optics. Patterned sapphire substratesand sapphire ingots also can be provided. Expert in sapphire optics manufacturing.



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