A-PLANE (11-20) SAPPHIRE WAFERS

Aplane sapphirewafers have a uniform dielectric constant and highly insulating characteristic, so they are generally used for hybrid microelectronic applications. This orientation can also be used for the growth of high superconductors.

For example, TlBaCaCuO (TbBaCaCuO), Tl-2212, the hetero-epitaxial superconducting thin film is grown on anoptical sapphirecerium oxide (CeO2) composite substrate. The availability of Angstrom level surface finishes allows for fine line interconnects of hybrid modules.

Specifications of A-Plane (11-20) Sapphire Wafers

Item	2-inch A-plane(11-20) 430μm Sapphire Wafers
Crystal Materials	99,999%, High Purity, Monocrystalline Al2O3
Grade	Prime, Epi-Ready
Surface Orientation	A-plane(11-20)
Diameter
Thickness	430 μm +/- 25 μm
Primary Flat Orientation	C-plane(0001) +/- 0.2°
Primary Flat Length
Single Side Polished	Front Surface	Epi-polished, Ra < 0.5 nm (by AFM)
(SSP)	Back Surface	Fine ground, Ra = 0.8 μm to 1.2 μm
Double Side Polished	Front Surface	Epi-polished, Ra < 0.5 nm (by AFM)
(DSP)	Back Surface	Epi-polished, Ra < 0.5 nm (by AFM)
TTV	< 10 μm
BOW	< 10 μm
WARP	< 10 μm
Cleaning / Packaging	Class 100 cleanroom cleaning and vacuum packaging,
	25 pieces in one cassette packaging or single piece packaging.

Note: Custom sapphire wafers and substrates with any orientation and any thickness can be provided.

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