.

TIP41

isc Silicon NPN Power Transistors TIP41/41A/41B/41C
DESCRIPTION
  • DC Current Gain -hFE = 30(Min)@IC= -0.3A
  • Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A

80V(Min)- TIP41B; 100V(Min)- TIP41C

  • Complement to Type TIP42/42A/42B/42C

APPLICATIONS

  • Designed for use in general purpose amplifer and

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

TIP41

40

V

TIP41A

60

TIP41B

80

TIP41C

100

VCEO

Collector-Emitter Voltage

TIP41

40

V

TIP41A

60

TIP41B

80

TIP41C

100

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

10

A

IB

Base Current

2

A

PC

Collector Power Dissipation

TC=25℃

65

W

Collector Power Dissipation

Ta=25℃

2

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-65~150

isc Silicon NPN Power Transistors TIP41/41A/41B/41C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS) *

Collector-Emitter

Sustaining Voltage

TIP41

IC= 30mA; IB= 0

40

V

TIP41A

60

TIP41B

80

TIP41C

100

VCE(sat) *

Collector-Emitter Saturation Voltage

IC= 6A ;IB= 0.6A

V

VBE(on)*

Base-Emitter On Voltage

IC= 6A ; VCE= 4V

V

ICES

Collector Cutoff Current

TIP41

VCE= 40V; VEB= 0

mA

TIP41A

VCE= 60V; VEB= 0

TIP41B

VCE= 80V; VEB= 0

TIP41C

VCE=100V; VEB= 0

ICEO

Collector Cutoff Current

TIP41/41A

VCE=30V; IB= 0

mA

TIP41B/41C

VCE= 60V; IB= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

mA

hFE-1*

DC Current Gain

IC=0.3A ; VCE=4V

30

hFE-2*

DC Current Gain

IC= 3A ; VCE= 4V

15

75

fT

Current-Gain—Bandwidth Product

IC= 0.5A ;VCE= 10V

3

MHz

* Pulse Test: PW≤300μs, Duty Cycle≤2%



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