TIP41
isc Silicon NPN Power Transistors TIP41/41A/41B/41C
DESCRIPTION
- DC Current Gain -hFE = 30(Min)@IC= -0.3A
- Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- TIP41; 60V(Min)- TIP41A
80V(Min)- TIP41B; 100V(Min)- TIP41C
- Complement to Type TIP42/42A/42B/42C
APPLICATIONS
- Designed for use in general purpose amplifer and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-Base Voltage |
TIP41 |
40 |
V |
TIP41A |
60 |
|||
TIP41B |
80 |
|||
TIP41C |
100 |
|||
VCEO |
Collector-Emitter Voltage |
TIP41 |
40 |
V |
TIP41A |
60 |
|||
TIP41B |
80 |
|||
TIP41C |
100 |
|||
VEBO |
Emitter-Base Voltage |
5 |
V |
|
IC |
Collector Current-Continuous |
6 |
A |
|
ICM |
Collector Current-Peak |
10 |
A |
|
IB |
Base Current |
2 |
A |
|
PC |
Collector Power Dissipation TC=25℃ |
65 |
W |
|
Collector Power Dissipation Ta=25℃ |
2 |
|||
Tj |
Junction Temperature |
150 |
℃ |
|
Tstg |
Storage Temperature Range |
-65~150 |
℃ |
isc Silicon NPN Power Transistors TIP41/41A/41B/41C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN |
MAX |
UNIT |
|
VCEO(SUS) * |
Collector-Emitter Sustaining Voltage |
TIP41 |
IC= 30mA; IB= 0 |
40 |
V |
|
TIP41A |
60 |
|||||
TIP41B |
80 |
|||||
TIP41C |
100 |
|||||
VCE(sat) * |
Collector-Emitter Saturation Voltage |
IC= 6A ;IB= 0.6A |
V |
|||
VBE(on)* |
Base-Emitter On Voltage |
IC= 6A ; VCE= 4V |
V |
|||
ICES |
Collector Cutoff Current |
TIP41 |
VCE= 40V; VEB= 0 |
mA |
||
TIP41A |
VCE= 60V; VEB= 0 |
|||||
TIP41B |
VCE= 80V; VEB= 0 |
|||||
TIP41C |
VCE=100V; VEB= 0 |
|||||
ICEO |
Collector Cutoff Current |
TIP41/41A |
VCE=30V; IB= 0 |
mA |
||
TIP41B/41C |
VCE= 60V; IB= 0 |
|||||
IEBO |
Emitter Cutoff Current |
VEB= 5V; IC= 0 |
mA |
|||
hFE-1* |
DC Current Gain |
IC=0.3A ; VCE=4V |
30 |
|||
hFE-2* |
DC Current Gain |
IC= 3A ; VCE= 4V |
15 |
75 |
||
fT |
Current-Gain—Bandwidth Product |
IC= 0.5A ;VCE= 10V |
3 |
MHz |
* Pulse Test: PW≤300μs, Duty Cycle≤2%
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