SiC(Silicon Carbide)Wafer
PWAM offers semiconductor materials,SiC substate for GaN epitaxy device,power devices, high-temperature device and optoelectron
PWAM offers semiconductor materials,SiC substate(Epi-Ready) for GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.
PWAM offers semiconductor materials,SiC substate for GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.
PWAM offers SiC substate,N type and Semi-insulating. Available size:4Inch(100mm),3Inch(76.2mm),2Inch(50.80mm),30*30mm,20*20mm,10*10mm,5*5mm. polytype 4H and 6H in different quality grades,Micropipe Density (MPD): Free,<5/cm2,<10/cm2,<30/cm2,<50/cm2,<100/cm2.Application: for GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices
Avalaible Plane:a-plane or c-plane 6H-SiC wafers and 4H-SiC wafers
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SiC(Silicon Carbide)Wafer |
PWAM offers semiconductor materials,SiC substate for GaN epitaxy device,power devices, high-temperature device and optoelectron
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