SiC(Silicon Carbide)Wafer
PWAM offers semiconductor materials,SiC substate for GaN epitaxy device,power devices, high-temperature device and optoelectron
PWAM offers semiconductor materials,SiC substate(Epi-Ready) for GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.
PWAM offers semiconductor materials,SiC substate for GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices.
PWAM offers SiC substate,N type and Semi-insulating. Available size:4Inch(100mm),3Inch(76.2mm),2Inch(50.80mm),30*30mm,20*20mm,10*10mm,5*5mm. polytype 4H and 6H in different quality grades,Micropipe Density (MPD): Free,<5/cm2,<10/cm2,<30/cm2,<50/cm2,<100/cm2.Application: for GaN epitaxy device,power devices, high-temperature device and optoelectronic Devices
Avalaible Plane:a-plane or c-plane 6H-SiC wafers and 4H-SiC wafers
Other supplier products
|
|
SiC(Silicon Carbide)Wafer |
PWAM offers semiconductor materials,SiC substate for GaN epitaxy device,power devices, high-temperature device and optoelectron
PWAM offers semic... |
|
|
Semiconductor wafer |
|
|
|
GaAs (Gallium Arsenide) Wafers |
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,... |
|
|
GaN(Gallium Nitride) Wafer |
GaN Wafer:2”(50.8mm),14mm*15mm;10mm*10mm;5mm*5mm, Free standing substrate, epi-ready
GaN Template(GaN-on-Sapphire):2"
GaN Epitaxial Wa... |
|
|
Silicon Epitaxial Wafer |
Epitaxy is the process of depositing a thin layer on substrate, Epitaxy layer can be as the same as the basis(Si/Si) or different with the basis (S... |
供应产品
Same products
