.

射频微波高频低介电常数熔融石英薄膜电路,石英玻璃薄膜电路,SiO2薄膜电路

Substrate Type and Specifications

Substrate Material

Purity

A Surface

Roughness

B Surface

Roughness

Dielectric

Constant

Thermal

Conductivity

Dissipation Factor

(Loss Tangent)

%

µ"

µ"

@1MHz

W/mK

@1MHz

Asfired Alumina (Al2O3)

3

3

Polished Alumina (Al2O3)

1

1 or 12

Aluminum Nitride (AlN)

98

3

3

170

Beryllium Oxide (BeO)

3

10

270

Sapphire (Crystalline)

100

1

1

-

Fused Silica (SiO2)

100

1

1

-

Ferrites and Garnets

-

16

16

-

-

Polished Titanates

-

3

3

36–180

-

-

WOCHENG commonly uses several

different materials for our thin film products, including alumina, beryllium oxide, aluminum nitride, fused silica quartz, titanates, ferrites and garnets. The materials are chosen for suitability for the application. Alumina is the most common substrate, but applications with high power dissipation tend to use BeO and AlN substrates for their thermal conductivity and high frequency applications would tend to use fused silica

quartz for its low dielectric constant.



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